Computers
Samsung shows NAND chip with more than 400 layers
Samsung’s V10 BV-NAND chip has more than 400 layers and 58% higher density than V9, but no commercial launch date yet.
Samsung has shown a new V10 BV-NAND storage chip with more than 400 memory layers, targeting AI servers and high-performance computing. The company presented it at the Future of Memory and Storage 2026 exhibition.
The chip uses Samsung’s 10th-generation vertical NAND architecture and a wafer-bonding design. According to ITzine, citing MobilityArena, Samsung is the first company in the industry to bring this architecture to market. Compared with ninth-generation NAND, V10 BV-NAND offers approximately 58% higher memory density, along with improved read, write, and I/O performance and better energy efficiency.
That density increase is the key change: more data can fit into the same physical footprint, while the architecture is intended to support workloads with heavy real-time data flows. Samsung says the design is built to deliver higher performance without a corresponding increase in power consumption.
The company has not disclosed a commercial launch date, product capacities, or pricing. ITzine reports that V10 BV-NAND could arrive before V11 NAND, whose announcement is expected next year, but that timing is not confirmed.
The technical direction is substantial rather than cosmetic: a claimed 58% density improvement and wafer bonding could make this a meaningful platform for AI infrastructure. Until Samsung provides shipping details and independently verifiable performance figures, however, it remains a promising architecture—not yet a product buyers can evaluate.